Display-Integrated Infrared Emitter and Sensor Structures

ABSTRACT

In one embodiment, an electronic display includes a first plurality of hexagon-shaped pixels and a second plurality of hexagon-shaped pixels that are coplanar with the first plurality of hexagon-shaped pixels. The first plurality of hexagon-shaped pixels each include an infrared (IR) emitter subpixel that is operable to emit IR light. The second plurality of hexagon-shaped pixels each include an IR detector subpixel that is operable to detect IR light. Each IR emitter subpixel and each IR detector subpixel includes an anode layer and a cathode layer. Each particular IR emitter subpixel includes an IR emissive layer located between the anode layer and the cathode layer of the particular IR emitter subpixel. Each particular IR detector subpixel includes an IR detector layer located between the anode layer and the cathode layer of the particular IR detector subpixel.

TECHNICAL FIELD

This disclosure relates generally to electronic displays, and moreparticularly to display-integrated infrared emitter and sensorstructures.

BACKGROUND

Pixels are utilized in a variety of electronic displays and sensors. Forexample, displays used in smartphones, laptop computers, and televisionsutilize arrays of pixels to display images. As another example, sensorsused in cameras utilize arrays of pixels to capture images. Pixelstypically include subpixels of various colors such as red, green, andblue.

SUMMARY OF PARTICULAR EMBODIMENTS

In one embodiment, an electronic display includes a first plurality ofhexagon-shaped pixels and a second plurality of hexagon-shaped pixelsthat are coplanar with the first plurality of hexagon-shaped pixels. Thefirst plurality of hexagon-shaped pixels each include an infrared (IR)emitter subpixel that is operable to emit IR light. The second pluralityof hexagon-shaped pixels each include an IR detector subpixel that isoperable to detect IR light. Each IR emitter subpixel and each IRdetector subpixel includes an anode layer and a cathode layer. Eachparticular IR emitter subpixel includes an IR emissive layer locatedbetween the anode layer and the cathode layer of the particular IRemitter subpixel. Each particular IR detector subpixel includes an IRdetector layer located between the anode layer and the cathode layer ofthe particular IR detector subpixel. At least one of the anode layer andthe cathode layer of each particular IR emitter subpixel and eachparticular IR detector subpixel is transparent to IR light.

In another embodiment, an electronic display includes a plurality ofcoplanar polygon-shaped pixels that each include an IR subpixel. Each IRsubpixel includes an anode layer, a cathode layer, and an IR layerlocated between the anode layer and the cathode layer of the particularIR subpixel. The IR layer may be an IR detector layer or an IR emissivelayer.

In another embodiment, a method of manufacturing an IR subpixel for anelectronic display includes creating a insulating layer by depositing alayer of insulating material and then patterning the layer of insulatingmaterial using lithography. The method further includes creating acathode layer of the IR subpixel by depositing a layer of conductivematerial on the patterned insulating layer and then patterning thecathode layer using lithography, wherein patterning the cathode layercomprises forming a portion of the cathode layer into a polygon shape.The method further includes creating an IR layer of the IR subpixel bydepositing a layer of IR emissive or IR detecting material on thepatterned cathode layer and then patterning the IR layer usinglithography, wherein patterning the IR layer comprises forming a portionof the IR layer into the polygon shape. The method further includescreating an anode layer of the IR subpixel by depositing a layer ofanode material on the patterned IR layer and then patterning the anodelayer using lithography, wherein patterning the anode layer comprisesforming a portion of the anode layer into the polygon shape.

The present disclosure presents several technical advantages. In someembodiments, subpixels (e.g., red, green, blue, IR, etc.) are verticallystacked on top of one another to create either display or sensor pixels.By vertically stacking the subpixel components, certain embodimentsremove the need for color filters and polarizers which are typicallyrequired in pixel technologies such as liquid crystal displays (LCD) andorganic light-emitting diode (OLED). This results in smaller pixel areasand greater pixel densities for higher resolutions than typicaldisplays. Some embodiments utilize electroluminescent quantum dottechnology that provides more efficient use of power and significantlyhigher contrast ratios than technologies such as LCD can offer.Additionally, because each subpixel may be made emissive directly byvoltage, faster response times are possible than with technologies suchas LCD. Embodiments that utilize quantum dots that are finely tuned toemit a very narrow band of color provide purer hues and improved colorgamut over existing technologies such as OLED and LCD. Thin film designof certain embodiments results in substantial weight and bulk reduction.These and other advantages result in a low-cost, power efficientelectronic display/sensor solution capable of high dynamic range outputwith a small enough pixel pitch to meet the needs of extremelyhigh-resolution applications. Furthermore, embodiments that include IRsubpixels provide the capability for electronic displays to emit anddetect IR light, which may enable the displays to provide functionalitysuch as eye-tracking and eye gaze analysis.

Other technical advantages will be readily apparent to one skilled inthe art from FIGS. 1 through 42B, their descriptions, and the claims.Moreover, while specific advantages have been enumerated above, variousembodiments may include all, some, or none of the enumerated advantages.

BRIEF DESCRIPTION OF THE DRAWINGS

For a more complete understanding of the present disclosure and itsadvantages, reference is now made to the following description, taken inconjunction with the accompanying drawings, in which:

FIG. 1 illustrates a single display pixel with vertically stackedsubpixels, according to certain embodiments;

FIGS. 2-3 illustrate exploded views of the display pixel of FIG. 1,according to certain embodiments;

FIG. 4 illustrates an array of pixels with stacked subpixels, accordingto certain embodiments;

FIG. 5 is a method of manufacturing a display pixel with stackedsubpixels, according to certain embodiments;

FIG. 6A illustrates a first insulating layer of the pixel of FIG. 1,according to certain embodiments;

FIG. 6B illustrates a portion of a photomask used to manufacture thefirst insulating layer of FIG. 6A, according to certain embodiments;

FIG. 7A illustrates a cathode layer of the first subpixel of FIG. 1,according to certain embodiments;

FIG. 7B illustrates a portion of a photomask used to manufacture thecathode layer of FIG. 7A, according to certain embodiments;

FIG. 8A illustrates an emissive layer of the first subpixel of FIG. 1,according to certain embodiments;

FIG. 8B illustrates a portion of a photomask used to manufacture theemissive layer of FIG. 8A, according to certain embodiments;

FIG. 9A illustrates an anode layer of the first subpixel of FIG. 1,according to certain embodiments;

FIG. 9B illustrates a portion of a photomask used to manufacture theanode layer of FIG. 9A, according to certain embodiments;

FIG. 10A illustrates a second insulating layer of the pixel of FIG. 1,according to certain embodiments;

FIG. 10B illustrates a portion of a photomask used to manufacture thesecond insulating layer of FIG. 10A, according to certain embodiments;

FIG. 11A illustrates a cathode layer of the second subpixel of FIG. 1,according to certain embodiments;

FIG. 11B illustrates a portion of a photomask used to manufacture thecathode layer of FIG. 11A, according to certain embodiments;

FIG. 12A illustrates an emissive layer of the second subpixel of FIG. 1,according to certain embodiments;

FIG. 12B illustrates a portion of a photomask used to manufacture theemissive layer of FIG. 12A, according to certain embodiments;

FIG. 13A illustrates an anode layer of the second subpixel of FIG. 1,according to certain embodiments;

FIG. 13B illustrates a portion of a photomask used to manufacture theanode layer of FIG. 13A, according to certain embodiments;

FIG. 14A illustrates a third insulating layer of the pixel of FIG. 1,according to certain embodiments;

FIG. 14B illustrates a portion of a photomask used to manufacture thethird insulating layer of FIG. 14A, according to certain embodiments;

FIG. 15A illustrates a cathode layer of the third subpixel of FIG. 1,according to certain embodiments;

FIG. 15B illustrates a portion of a photomask used to manufacture thecathode layer of FIG. 15A, according to certain embodiments;

FIG. 16A illustrates an emissive layer of the third subpixel of FIG. 1,according to certain embodiments;

FIG. 16B illustrates a portion of a photomask used to manufacture theemissive layer of FIG. 16A, according to certain embodiments;

FIG. 17A illustrates an anode layer of the third subpixel of FIG. 1,according to certain embodiments;

FIG. 17B illustrates a portion of a photomask used to manufacture theanode layer of FIG. 17A, according to certain embodiments;

FIG. 18 illustrates a single sensor pixel with vertically stackedsubpixels, according to certain embodiments;

FIGS. 19-20 illustrate exploded views of the sensor pixel of FIG. 18,according to certain embodiments;

FIG. 21 is a method of manufacturing a sensor pixel with stackedsubpixels, according to certain embodiments;

FIG. 22 illustrates a single IR emitter subpixel that may be utilizedwith the display pixel of FIG. 1 or the sensor pixel of FIG. 18,according to certain embodiments;

FIG. 23 illustrates the IR emitter subpixel of FIG. 22 used incombination with the display pixel of FIG. 1, according to certainembodiments;

FIG. 24 illustrates a rotated view of the IR emitter subpixel of FIG.22, according to certain embodiments;

FIG. 25 illustrates an exploded view of the IR emitter subpixel of FIG.22, according to certain embodiments;

FIG. 26 illustrates a single IR detector subpixel that may be utilizedwith the display pixel of FIG. 1 or the sensor pixel of FIG. 18,according to certain embodiments;

FIG. 27 illustrates the IR detector subpixel of FIG. 26 used incombination with the display pixel of FIG. 1, according to certainembodiments;

FIG. 28 illustrates a rotated view of the IR detector subpixel of FIG.26, according to certain embodiments;

FIG. 29 illustrates an exploded view of the IR detector subpixel of FIG.26, according to certain embodiments;

FIGS. 30-33 illustrate arrays of pixel locations of electronic displays,according to certain embodiments;

FIG. 34 is a method of manufacturing an IR subpixel, according tocertain embodiments;

FIGS. 35A and 36A illustrate first insulating layers of IR subpixels,according to certain embodiments;

FIG. 35B illustrates a portion of a photomask used to manufacture thefirst insulating layer of FIG. 35A, according to certain embodiments;

FIG. 36B illustrates a portion of a photomask used to manufacture thefirst insulating layer of FIG. 36A, according to certain embodiments;

FIGS. 37A and 38A illustrate cathode layers of IR subpixels, accordingto certain embodiments;

FIG. 37B illustrates a portion of a photomask used to manufacture thecathode layer of FIG. 37A, according to certain embodiments;

FIG. 38B illustrates a portion of a photomask used to manufacture thecathode layer of FIG. 38A, according to certain embodiments;

FIGS. 39A and 40A illustrate an IR layer of an IR subpixel, according tocertain embodiments;

FIG. 39B illustrates a portion of a photomask used to manufacture the IRlayer of FIG. 39A, according to certain embodiments;

FIG. 40B illustrates a portion of a photomask used to manufacture the IRlayer of FIG. 40A, according to certain embodiments;

FIGS. 41A and 42A illustrate anode layers of IR subpixels, according tocertain embodiments;

FIG. 41B illustrates a portion of a photomask used to manufacture theanode layer of FIG. 41A, according to certain embodiments; and

FIG. 42B illustrates a portion of a photomask used to manufacture theanode layer of FIG. 42A, according to certain embodiments.

DETAILED DESCRIPTION OF EXAMPLE EMBODIMENTS

Pixels are utilized in a variety of electronic displays and sensors. Forexample, displays used in smartphones, laptop computers, and televisionsutilize arrays of pixels to display images. As another example, sensorsused in cameras utilize arrays of pixels to capture images. Pixels mayin some instances include subpixels of various colors. For example, somepixels may include red, blue, and green subpixels. Subpixels aretypically co-planar and adjacent to each other within a pixel. Havingco-planar subpixels may be problematic in some applications, however,due to physical size requirements. For example, some electronic displaysrequire an extremely small pixel pitch (i.e., the distance between eachpixel) to provide enough resolution for visual acuity. Doing so whileemitting a high dynamic range of light is problematic given the lowerlight output due to physical size reduction of the pixels themselves andthe circuitry normally surrounding them.

To address these and other problems with existing pixel designs,embodiments of the disclosure provide pixels with vertically stackedsubpixels that reduce the physical space required for each pixel. Forexample, some embodiments include three transparent overlapping red,green, and blue subpixels that are vertically stacked on top of oneanother. The pixels of some embodiments may additionally oralternatively include an infrared (IR) subpixel that either detects oremits IR light. For example, some embodiments of electronic displays mayinclude IR detecting and IR emitting subpixels in various patternsthroughout an array of pixels in order to emit and detect IR light. Byvertically stacking the subpixels instead of locating them within thesame plane, a higher number of pixels can be fit into a display orsensor area, thus providing the high pixel densities required by certainapplications.

In embodiments that emit light (e.g., pixels for electronic displays),light emitted from the vertically stacked subpixels is additivelycombined to create the full color representation. This is in contrast toexisting technologies that utilize subtraction with filters andpolarization to create various colors of light. In some embodiments,each individual subpixel structure includes a transparent front emissiveplane and a transparent back circuitry plane. The front plane mayinclude transparent conductive film electrodes, charge injection layers,and a tuned color-specific electroluminescent quantum dot layer. Drivingcircuitry for each subpixel is accomplished by a back plane of layeredtransparent transistor/capacitor arrays to handle voltage switching andstorage for each subpixel. Example embodiments of display pixels areillustrated in FIGS. 1-3, and a method of manufacturing display pixelsis illustrated in FIG. 5.

In embodiments that sense light (e.g., pixels for sensor arrays), lightentering the vertically stacked subpixels passes through to subsequentlayers, with narrow bands of light captured by each subpixel layer foraccurate color imaging. In some embodiments, each individual subpixelstructure is an assembly of transparent layers of tuned color-specificphotoelectric quantum dot films, conductive films, and semiconductorfilms that are patterned to create a phototransistor array. Readout fromthis array carries voltage from specific pixels only in response to theamount of color present in the light entering a given subpixel layer.Since each layer is tuned to detect only a particular band of light,photoelectric voltage is produced according to the percentage of thatband contained within the wavelength of the incoming light. Exampleembodiments of sensor pixels are illustrated in FIGS. 18-20, and amethod of manufacturing sensor pixels is illustrated in FIG. 21.

In some embodiments, IR subpixels are included in some or all pixelstacks of an array of pixels of an electronic display in order to emitand detect IR light. In one example, an electronic display may include arepeating pattern of IR detector and emitter subpixels that includes anIR emitter subpixel at a center pixel location and IR detector subpixelsat all surrounding pixel locations around the IR emitter subpixel. Asanother example, an electronic display may include a repeating patternof IR detector and emitter subpixels that includes an IR detectorsubpixel at a center pixel location and IR emitter subpixels at allsurrounding pixel locations around the IR emitter subpixel. In someembodiments, IR subpixels may be included above or below othervisible-color subpixels (e.g., above or below the RGB display pixelsillustrated in FIGS. 1-3), or may be inserted in place of anothersubpixel (e.g., in place of one of the RBG subpixels of the displaypixels illustrated in FIGS. 1-3). Example embodiments of IR subpixelsare illustrated in FIGS. 22-33, and methods of manufacturing IRsubpixels are illustrated in FIG. 34.

To facilitate a better understanding of the present disclosure, thefollowing examples of certain embodiments are given. The followingexamples are not to be read to limit or define the scope of thedisclosure. Embodiments of the present disclosure and its advantages arebest understood by referring to FIGS. 1-42B, where like numbers are usedto indicate like and corresponding parts.

FIGS. 1-4 illustrate various views of a single display pixel 100 withvertically stacked subpixels 110. FIG. 1 illustrates an assembled pixel100, FIGS. 2-3 illustrate different exploded views of pixel 100, andFIG. 4 illustrates an array of pixels 100. In general, these figuresdepict the conductive portions of the illustrated layers. Otherinsulating areas (e.g., outside and between the subpixel stacks) havebeen removed for sake of visual clarity.

Display pixel 100 may be utilized in any electronic display such as adisplay of a smartphone, laptop computer, television, a near-eye display(e.g., a head-mounted display), a heads-up display (HUD), and the like.In general, pixel 100 includes multiple subpixels 110 that arevertically stacked on one another. For example, some embodiments ofpixel 100 may include three subpixels 110: first subpixel 110A formed ona substrate (e.g., backplane driving circuitry), second subpixel 110Bthat is stacked on top of first subpixel 110A, and third subpixel 110Cthat is stacked on top of second subpixel 110B. In a particularembodiment, first subpixel 110A is a red subpixel (i.e., first subpixel110A emits red light), second subpixel 110B is a green subpixel (i.e.,second subpixel 110B emits green light), and third subpixel 110C is ablue subpixel (i.e., third subpixel 110C emits blue light). However,other embodiments may include any other order of red, green, and bluesubpixels 110 (e.g., RBG, GRB, GBR, BRG, or BGR). Furthermore, someembodiments may include more or fewer numbers of subpixels 110 than whatis illustrated in FIGS. 1-4 and may include any other appropriate colorsof subpixels (e.g., yellow, amber, violet, etc.) or non-visiblewavelengths (e.g., IR emitter subpixel 2210 or IR detector subpixel2610).

In some embodiments, pixel 100 is coupled to backplane circuitry 120which may be formed on a substrate or backplane. In some embodiments,circuitry 120 includes layered transparent transistor/capacitor arraysto handle voltage switching and storage for each subpixel 110. Variouslayers of each subpixel 110 (e.g., anode layers 220 and cathode layers230 as described below) may be electrically coupled to circuitry 120 viaconnector columns 130 and connection pads 140. For example, firstsubpixel 110A may be coupled to circuitry 120 via connector columns 130Aand 130B and connection pads 140A and 140B, second subpixel 110B may becoupled to circuitry 120 via connector columns 130C and 130D andconnection pads 140C and 140D, and third subpixel 110C may be coupled tocircuitry 120 via connector columns 130E and 130F and connection pads140E and 140F, as illustrated. As a result, each subpixel 110 may beindividually addressed and controlled by circuitry 120.

As illustrated in detail in FIGS. 2-3, each subpixel 110 may include atleast three layers: an emissive layer 210, an anode layer 220, and acathode layer 230. For example, subpixel 110A may include at least acathode layer 230A, an emissive layer 210A on top of cathode layer 230A,and an anode layer 220A on top of emissive layer 210A. Likewise,subpixel 110B may include at least a cathode layer 230B, an emissivelayer 210B on top of cathode layer 230B, and an anode layer 220B on topof emissive layer 210B. Similarly, subpixel 110C may include at least acathode layer 230C, an emissive layer 210C on top of cathode layer 230C,and an anode layer 220C on top of emissive layer 210C. In otherembodiments, subpixels 110 may include additional layers that are notillustrated in FIGS. 2-3. For example, some embodiments of subpixels 110may include additional insulating layers 310 that are not specificallyillustrated. As a specific example, some embodiments of emissive layers210 may include multiple sub-layers of OLED emission architectures orelectroluminescent quantum dot architectures.

Anode layers 220 and cathode layers 230 are formed, respectively, fromany appropriate anode or cathode material. For example, anode layers 220and cathode layers 230 may include simple conductive polymers (orsimilar materials) used as transparent electrodes. In general, anodelayers 220 and cathode layers 230 are transparent so that light may passfrom emissive layers 210 and combine with light from subsequentsubpixels 110.

Emissive layers 210 generally are formed from any appropriate materialcapable of emitting light while supporting transparency. In someembodiments, emissive layers 210 may include both electroluminescentcapabilities (e.g., a diode converting electric current into light) andphotoluminescent capabilities (for down-converting incominghigher-energy light to lower-energy wavelengths). For example, emissivelayers 210 may be tuned color-specific electroluminescent quantum dot(QD) layers such as quantum-dot-based light-emitting diode (QLED)layers. In some embodiments, emissive layers 210 may be organiclight-emitting diode (OLED) layers. In general, emissive layers 210 maybe precisely tuned for narrow band emission of specific wavelengths oflight (e.g., red, green, and blue). By using electroluminescent QDemissive layers 210, certain embodiments provide 1) more efficient useof power than other methods such as liquid crystal displays (LCD), and2) significantly higher contrast ratios than other technologies such asLCD can offer. And because each subpixel 110 is made emissive directlyby voltage, faster response times are possible than with technologiessuch as LCD. Furthermore, implementing quantum dots which are finelytuned to emit a very narrow band of color provides purer hues andimproved color gamut over both OLED and LCD technologies.

In some embodiments, pixels 100 and subpixels 110 have an overall shapeof a polygon when viewed from above. For example, pixels 100 andsubpixels 110 may be hexagon-shaped, octagon-shaped, or the shape of anyother polygon such as a triangle or quadrangle. To achieve the desiredshape, each layer of subpixel 110 may be formed in the desired shape.For example, each of anode layer 220, emissive layer 210, and cathodelayer 230 may be formed in the shape of the desired polygon. As aresult, each side of pixel 100 may be adjacent to a side of anotherpixel 100 as illustrated in FIG. 4. For example, if pixel 100 is in theshape of a hexagon, each pixel 100 in an array of pixels such as array400 is adjacent to six other pixels 100. Furthermore, each side of eachindividual pixel 100 is adjacent to a side of a respective one of thesix other hexagon-shaped pixels 100. In this way, the emissive area ofthe overall display surface is maximized since only very narrownon-conductive boundaries are patterned between each pixel. Thisdiminishes the percentage of non-emissive “dark” areas within array 400.

Embodiments of pixels 100 include multiple connector columns 130 thatelectrically connect the various layers of subpixels 110 to circuitry120 via connection pads 140. For example, in some embodiments, pixel 100includes six connector columns 130: connector column 130A that couplescathode layer 230A of subpixel 110A to circuitry 120, connector column130B that couples anode layer 220A of subpixel 110A to circuitry 120,connector column 130C that couples cathode layer 230B of subpixel 110Bto circuitry 120, connector column 130D that couples anode layer 220B ofsubpixel 110B to circuitry 120, connector column 130E that couplescathode layer 230C of subpixel 110C to circuitry 120, and connectorcolumn 130F that couples anode layer 220C of subpixel 110C to circuitry120.

In general, connector columns 130 are connected only to a single layerof pixel 100 (i.e., a single anode layer 220 or cathode layer 230),thereby permitting circuitry 120 to uniquely address each anode layer220 and cathode layer 230 of pixel 100. For example, connector column130F is coupled only to anode layer 220C of subpixel 110C, asillustrated. Connector columns 130 are built up with one or moreconnector column portions 135, as illustrated in FIGS. 6A-16B. Eachconnector column portion 135 is an island of material that iselectrically isolated from the layer on which it is formed, but permitsan electrical connection between the various layers of connector column130. Connector column portions 135 are formed from any appropriateconductive material, and are not necessarily formed from the samematerial of the layer on which it is located (e.g., if it is on anemissive layer, it is not formed from emissive material). Connectorcolumns 130 are generally adjacent to a single side of pixel 100 and mayoccupy less than half of the length of a single side of pixel 100 inorder to allow enough space for a connector column 130 of an adjacentpixel 100. For example, as illustrated in FIG. 4, connector column 130Eof pixel 100A occupies one side of pixel 100 but leaves enough space forconnector column 130B of pixel 100B. In addition, the connector columns130 of a particular pixel 100 all have unique heights, in someembodiments. In the illustrated embodiment, for example, connectorcolumn 130F is the full height of pixel 100, while connector column 130Bis only as tall as subpixel 110A. That is, the height of a particularconnector column 130 may depend on the path of the particular connectorcolumn 130 to its connection pad 140. Connector columns 130 may be anyappropriate size or shape. For example, connector columns 130 may be inthe shape of a square, rectangle, circle, triangle, trapezoid, or anyother appropriate shape.

Embodiments of pixel 100 may have one or more insulating layers 310, asillustrated in FIGS. 2-3. For example, some embodiments of pixel 100 mayinclude a first insulating layer 310A between cathode layer 230A ofsubpixel 110A and circuitry 120, a second insulating layer 310B betweencathode layer 230B of subpixel 110B and anode layer 220A of subpixel110A, and a third insulating layer 310C between cathode layer 230C ofsubpixel 110C and anode layer 220B of subpixel 110B. Insulating layers310 may be any appropriate material that electrically isolates adjacentlayers of pixel 100.

FIG. 5 illustrates a method 500 of manufacturing a display pixel withstacked subpixels. For example, method 500 may be used to manufacturepixel 100 having stacked subpixels 110, as described above. Method 500,in general, utilizes steps 510-540 to create layers of a subpixel usinglithography. The various layers created by these steps and thephotomasks that may be utilized to create the various layers areillustrated in FIGS. 6A-17B, wherein the insulating material has beenremoved from the layers to allow a better view of the structure ofconductive elements. As described in more detail below, steps 510-540may be repeated one or more times to create stacked subpixels such assubpixels 110 of pixel 100. For example, steps 510-540 may be performeda total of three times to create stacked subpixels 110A-110C, asdescribed above.

Method 500 may begin in step 510 where a transparent insulating layer iscreated by depositing a layer of transparent insulating material andthen patterning the layer of transparent insulating material usinglithography. In some embodiments, the transparent insulating layer isinsulating layer 310A, which is illustrated in FIG. 6A. In someembodiments, the layer of transparent insulating material is depositedon a substrate or backplane that includes circuitry 120, as describedabove. In some embodiments, the layer of transparent insulating materialis patterned into the transparent insulating layer usingphotolithography. A portion of a photomask 600 that may be utilized bythis step to pattern the layer of transparent insulating material intothe transparent insulating layer is illustrated in FIG. 6B.

At step 520, a transparent cathode layer of a subpixel is created bydepositing a layer of transparent conductive material on the patternedtransparent insulating layer of step 510 and then patterning thetransparent cathode layer using lithography such as photolithography. Insome embodiments, the transparent cathode layer is cathode layer 230A,which is illustrated in FIG. 7A. A portion of a photomask 700 that maybe utilized by this step to pattern the layer of transparent conductivematerial into the transparent cathode layer is illustrated in FIG. 7B.In some embodiments, patterning the transparent cathode layer includesforming a portion of the transparent cathode layer into a polygon shape,such as a hexagon or an octagon. For example, as illustrated in FIG. 7B,the transparent cathode layer of a single subpixel may have an overallshape of a hexagon when viewed from above and may include a portion of aconnector column 130 (e.g., in the shape of a rectangle or a square)coupled to one side of the hexagon shape.

At step 530, an emissive layer of a subpixel is created by depositing alayer of emissive material on the patterned transparent cathode layer ofstep 520 and then patterning the emissive layer using lithography suchas photolithography. In some embodiments, the emissive layer is emissivelayer 210A, which is illustrated in FIG. 8A. A portion of a photomask800 that may be utilized by this step to pattern the layer of emissivematerial into the emissive layer is illustrated in FIG. 8B. In someembodiments, patterning the emissive layer includes forming a portion ofthe emissive layer into a polygon shape, such as a hexagon or anoctagon. For example, as illustrated in FIG. 8B, the emissive layer of asingle subpixel may have an overall shape of a hexagon when viewed fromabove. Unlike the transparent cathode layer of step 520, the sides ofthe hexagon shape of the emissive layer of this step may be devoid ofany portions of connector columns 130.

In some embodiments, the color output of the emissive layers of step 530are precisely tuned for narrow band emission, resulting in extremelyaccurate color representation. In some embodiments, high contrast ratiosare achievable due to the lack of additional polarizers or filteringnecessary to govern the light output of each subpixel. This results inhigh dynamic range image reproduction with minimal required drivingvoltage.

At step 540, a transparent anode layer of a subpixel is created bydepositing a layer of transparent anode material on the patternedemissive layer of step 530 and then patterning the transparent anodelayer using lithography such as photolithography. In some embodiments,the transparent anode layer is anode layer 220A, which is illustrated inFIG. 9A. A portion of a photomask 900 that may be utilized by this stepto pattern the layer of transparent anode material into the transparentanode layer is illustrated in FIG. 9B. In some embodiments, patterningthe transparent anode layer includes forming a portion of thetransparent anode layer into a polygon shape, such as a hexagon or anoctagon. For example, as illustrated in FIG. 9B, the transparent anodelayer of a single subpixel may have an overall shape of a hexagon whenviewed from above and may include a portion of a connector column 130(e.g., in the shape of a rectangle or a square) coupled to one side ofthe hexagon shape.

At step 550, method 500 determines whether to repeat steps 510-540 basedon whether additional subpixels are to be formed. Using the exampleembodiment of FIG. 1, for example, method 500 would repeat steps 510-540two additional times in order to create second subpixel 110B on top offirst subpixel 110A and then third subpixel 110C on top of secondsubpixel 110B. To create second subpixel 110B on top of first subpixel110A, method 500 would repeat steps 510-540 to create the various layersillustrated in FIGS. 10A, 11A, 12A, and, 13A, respectively. Portions ofphotomasks 1000, 1100, 1200, and 1300 that may be utilized by thesesteps to create second subpixel 110B are illustrated in FIGS. 10B, 11B,12B, and, 13B, respectively. To create third subpixel 110C on top ofsecond subpixel 110B, method 500 would repeat steps 510-540 to createthe various layers illustrated in FIGS. 14A, 15A, 16A, and, 17A,respectively. Portions of photomasks 1400, 1500, 1600, and 1700 that maybe utilized by these steps to create third subpixel 110C are illustratedin FIGS. 14B, 15B, 16B, and, 17B, respectively.

In some embodiments, method 500 may include forming additional layersthat are not specifically illustrated in FIG. 5. For example, additionallayers such as insulating layers 310 may be formed by method 500 at anyappropriate location. As another example, some embodiments may includeone or more additional layers of graphene or other similarelectrically-enhancing materials in order to improve efficiency andconductivity.

As described above, pixels with vertically stacked subpixels may beutilized as either display or sensor pixels. The previous figuresillustrated embodiments of display pixels 100 that include emissivelayers 210. The following FIGS. 18-20, however, illustrate embodimentsof sensor pixels 1800 with vertically stacked subpixels 110 that includephotodetector layers 1910 in place of emissive layers 210. FIG. 18illustrates an assembled sensor pixel 1800 and FIGS. 19-20 illustratedifferent exploded views of sensor pixel 1800. In general, these figuresdepict the conductive portions of the illustrated layers. Otherinsulating areas (e.g., outside and between the subpixel stacks) havebeen removed for sake of visual clarity.

Sensor pixel 1800 may be utilized in any electronic devices such ascameras that are used to sense or capture light (e.g., photos andvideos). Like display pixel 100, sensor pixel 1800 includes multiplesubpixels 110 that are vertically stacked on top of one another. Forexample, some embodiments of pixel 1800 may include three subpixels 110:first subpixel 110A, second subpixel 110B that is stacked on top offirst subpixel 110A, and third subpixel 110C that is stacked on top ofsecond subpixel 110B. In a particular embodiment, first subpixel 110A isa red subpixel (i.e., first subpixel 110A detects red light), secondsubpixel 110B is a green subpixel (i.e., second subpixel 110B detectsgreen light), and third subpixel 110C is a blue subpixel (i.e., thirdsubpixel 110C detects blue light). However, other embodiments mayinclude any other order of red, green, and blue subpixels 110.Furthermore, some embodiments may include more or few numbers ofsubpixels 110 than what is illustrated in FIGS. 18-20 and may includeany other appropriate colors of subpixels (e.g., violet, etc.).

Like display pixel 100, sensor pixel 1800 may be coupled to backplanecircuitry 120. In some embodiments, circuitry 120 includes layeredtransparent transistor/capacitor arrays to handle voltage switching andstorage for each subpixel 110 of pixel 1800. Various layers of eachsubpixel 110 (e.g., anode layers 220 and cathode layers 230 as describedabove) may be electrically coupled to circuitry 120 via connectorcolumns 130 and connection pads 140. For example, first subpixel 110Amay be coupled to circuitry 120 via connector columns 130A and 130B andconnection pads 140A and 140B, second subpixel 110B may be coupled tocircuitry 120 via connector columns 130C and 130D and connection pads140C and 140D, and third subpixel 110C may be coupled to circuitry 120via connector columns 130E and 130F and connection pads 140E and 140F,as illustrated. As a result, each subpixel 110 may be individuallyaddressed and controlled by circuitry 120.

As illustrated in detail in FIGS. 19-20, each subpixel 110 of sensorpixel 1800 may include at least three layers: a photodetector layer1910, an anode layer 220, and a cathode layer 230. For example, subpixel110A may include at least a cathode layer 230A, a photodetector layer1910A on top of cathode layer 230A, and an anode layer 220A on top ofphotodetector layer 1910A. Likewise, subpixel 110B may include at leasta cathode layer 230B, a photodetector layer 1910B on top of cathodelayer 230B, and an anode layer 220B on top of photodetector layer 1910B.Similarly, subpixel 110C may include at least a cathode layer 230C, aphotodetector layer 1910C on top of cathode layer 230C, and an anodelayer 220C on top of photodetector layer 1910C. In other embodiments,subpixels 110 may include additional layers that are not illustrated inFIGS. 18-20. For example, some embodiments of subpixels 110 may includeadditional insulating layers 310 that are not specifically illustrated.As another example, some embodiments may include one or more additionallayers of graphene or other similar electrically-enhancing materials inorder to improve efficiency and conductivity.

As discussed above with respect to FIGS. 2-3, anode layers 220 andcathode layers 230 are formed, respectively, from any appropriate anodeor cathode material. In general, anode layers 220 and cathode layers 230are transparent so that light may pass through them and intophotodetector layers 1910. Only narrow bands of light are captured byeach photodetector layer 1910 for accurate color imaging.

Photodetector layers 1910 generally are formed from any appropriatematerial capable of detecting light while supporting transparency. Forexample, photodetector layers 1910 may be tuned color-specificelectroluminescent or photoelectric QD layers such as QLED layers. Insome embodiments, photodetector layers 1910 may be OLED layers. In someembodiments, photodetector layers 1910 may be precisely tuned for narrowband detection of specific wavelengths of light (e.g., red, green, andblue). By using electroluminescent QD photodetector layers 1910, certainembodiments provide 1) improved color gamut in the resulting imagerysince precisely-tuned photoelectric quantum dot films are used tocapture only the band of light necessary for a given subpixel, and 2)greatly improved shutter speeds over traditional CMOS image sensors dueto very fast response times of quantum dot photoelectric materials.

In some embodiments, photodetector layers 1910 utilize any transparentphotodetector material in combination with unique color filteringinstead of QD photodetectors. For example, as depicted in FIG. 19, fullspectrum light may first enter sensor pixel 1800 from the top (i.e.,through third subpixel 110C). Third subpixel 110C may include a specificcolor filter as an additional “sub-layer” (e.g., within photodetectorlayer 1910) to allow only certain wavelengths of light to pass through.Second subpixel 110B may include a color filter of a different specificcolor to allow only other certain wavelengths of light to pass throughto first subpixel 110A beneath it. By mathematically subtracting thereadout signals from each of these subpixels 110, sensor pixel 1800 maybe able to isolate specific colors from the upper two subpixels (e.g.,110C and 110B), thus outputting a full RGB signal.

In some embodiments, sensor pixels 1800 and subpixels 110 have anoverall shape of a polygon when viewed from above. For example, pixels1800 and subpixels 110 may be hexagon-shaped, octagon-shaped, or theshape of any other polygon. To achieve the desired shape, each layer ofsubpixel 110 may be formed in the desired shape. For example, each ofanode layer 220, photodetector layer 1910, and cathode layer 230 may beformed in the shape of the desired polygon. As a result, each side ofpixel 1800 may be adjacent to a side of another pixel 1800, similar topixels 100 as illustrated in FIG. 4. For example, if pixel 1800 is inthe shape of a hexagon, each pixel 1800 in an array of pixels such asarray 400 is adjacent to six other pixels 1800. Furthermore, each sideof each individual pixel 1800 is adjacent to a side of a respective oneof the six other hexagon-shaped pixels 1800. In this way, the sensitivearea of the overall display surface is maximized since only very narrownon-conductive boundaries are patterned between each pixel. Thisdiminishes the percentage of non-emissive “dark” areas within an arrayof pixels 1800.

Like display pixels 100, embodiments of sensor pixels 1800 includemultiple connector columns 130 that electrically connect the variouslayers of subpixels 110 to circuitry 120 via connection pads 140. Forexample, in some embodiments, pixel 1800 includes six connector columns130: connector column 130A that couples cathode layer 230A of subpixel110A to circuitry 120, connector column 130B that couples anode layer220A of subpixel 110A to circuitry 120, connector column 130C thatcouples cathode layer 230B of subpixel 110B to circuitry 120, connectorcolumn 130D that couples anode layer 220B of subpixel 110B to circuitry120, connector column 130E that couples cathode layer 230C of subpixel110C to circuitry 120, and connector column 130F that couples anodelayer 220C of subpixel 110C to circuitry 120.

FIG. 21 illustrates a method 2100 of manufacturing a sensor pixel withstacked subpixels. For example, method 2100 may be used to manufacturepixel 1800 having stacked subpixels 110, as described above. Method2100, in general, utilizes steps 2110-2140 to create layers of asubpixel using lithography. The various layers created by these stepsand the photomasks that may be utilized to create the various layers areillustrated in FIGS. 6A-17B, except that emissive layers 210 arereplaced by photodetector layers 1910. As described in more detailbelow, steps 2110-2140 may be repeated one or more times to createstacked subpixels such as subpixels 110 of pixel 1800. For example,steps 2110-2140 may be performed a total of three times to createstacked subpixels 110A-110C, as described above.

Method 2100 may begin in step 2110 where a transparent insulating layeris created by depositing a layer of transparent insulating material andthen patterning the layer of transparent insulating material usinglithography. In some embodiments, the transparent insulating layer isinsulating layer 310A, which is illustrated in FIG. 6A. In someembodiments, the layer of transparent insulating material is depositedon a substrate or backplane that includes circuitry 120, as describedabove. In some embodiments, the layer of transparent insulating materialis patterned into the transparent insulating layer usingphotolithography. A portion of a photomask 600 that may be utilized bythis step to pattern the layer of transparent insulating material intothe transparent insulating layer is illustrated in FIG. 6B.

At step 2120, a transparent cathode layer of a subpixel is created bydepositing a layer of transparent conductive material on the patternedtransparent insulating layer of step 2110 and then patterning thetransparent cathode layer using lithography such as photolithography. Insome embodiments, the transparent cathode layer is cathode layer 230A,which is illustrated in FIG. 7A. A portion of a photomask 700 that maybe utilized by this step to pattern the layer of transparent conductivematerial into the transparent cathode layer is illustrated in FIG. 7B.In some embodiments, patterning the transparent cathode layer includesforming a portion of the transparent cathode layer into a polygon shape,such as a hexagon or an octagon. For example, as illustrated in FIG. 7B,the transparent cathode layer of a single subpixel may have an overallshape of a hexagon when viewed from above and may include a portion of aconnector column 130 (e.g., in the shape of a rectangle or a square)coupled to one side of the hexagon shape.

At step 2130, a photodetector layer of a subpixel is created bydepositing a layer of photodetector material on the patternedtransparent cathode layer of step 2120 and then patterning thephotodetector layer using lithography such as photolithography. In someembodiments, the photodetector layer is photodetector layer 1910A, whichis illustrated in FIG. 8A (except that emissive layer 210A is replacedby photodetector layer 1910A). A portion of a photomask 800 that may beutilized by this step to pattern the layer of photodetector materialinto the photodetector layer is illustrated in FIG. 8B. In someembodiments, patterning the photodetector layer includes forming aportion of the photodetector layer into a polygon shape, such as ahexagon or an octagon. For example, as illustrated in FIG. 8B, thephotodetector layer of a single subpixel may have an overall shape of ahexagon when viewed from above. Unlike the transparent cathode layer ofstep 2120, the sides of the hexagon shape of the photodetector layer ofthis step may be devoid of any portions of connector columns 130.

At step 2140, a transparent anode layer of a subpixel is created bydepositing a layer of transparent anode material on the patternedphotodetector layer of step 2130 and then patterning the transparentanode layer using lithography such as photolithography. In someembodiments, the transparent anode layer is anode layer 220A, which isillustrated in FIG. 9A. A portion of a photomask 900 that may beutilized by this step to pattern the layer of transparent anode materialinto the transparent anode layer is illustrated in FIG. 9B. In someembodiments, patterning the transparent anode layer includes forming aportion of the transparent anode layer into a polygon shape, such as ahexagon or an octagon. For example, as illustrated in FIG. 9B, thetransparent anode layer of a single subpixel may have an overall shapeof a hexagon when viewed from above and may include a portion of aconnector column 130 (e.g., in the shape of a rectangle or a square)coupled to one side of the hexagon shape.

At step 2150, method 2100 determines whether to repeat steps 2110-2140based on whether additional subpixels are to be formed for pixel 1800.Using the example embodiment of FIG. 18, for example, method 2100 wouldrepeat steps 2110-2140 two additional times in order to create secondsubpixel 110B on top of first subpixel 110A and then third subpixel 110Con top of second subpixel 110B. To create second subpixel 110B on top offirst subpixel 110A, method 2100 would repeat steps 2110-2140 to createthe various layers illustrated in FIGS. 10A, 11A, 12A, and, 13A,respectively. Portions of photomasks 1000, 1100, 1200, and 1300 that maybe utilized by these steps to create second subpixel 110B areillustrated in FIGS. 10B, 11B, 12B, and, 13B, respectively. To createthird subpixel 110C on top of second subpixel 110B, method 2100 wouldrepeat steps 2110-2140 to create the various layers illustrated in FIGS.14A, 121A, 16A, and, 17A, respectively. Portions of photomasks 1400,12100, 1600, and 1700 that may be utilized by these steps to createthird subpixel 110C are illustrated in FIGS. 14B, 121B, 16B, and, 17B,respectively.

In some embodiments, method 2100 may include forming additional layersthat are not specifically illustrated in FIG. 21. For example,additional layers such as insulating layers 310 may be formed by method2100 at any appropriate location. Furthermore, as previously noted, somesteps of some embodiments of method 210 may include additional stepsthat are not specifically mentioned. For example, some layers (e.g.,some insulating layers) may be a combination of both insulating andconductive films. Such layers may be manufactured using standard planarsemiconductor techniques: depositing, masking, etching, and repeating asmany times as necessary to produce the required pattern of conductiveand non-conductive areas within the layer.

FIGS. 22-25 illustrate various views of a single IR emitter subpixel2210, and FIGS. 26-29 illustrate various views of a single IR detectorsubpixel 2610. IR emitter subpixels 2210 and IR detector subpixels 2610may be utilized by some embodiments in combination with or in place ofone or all subpixels 110 described above. FIGS. 22 and 26 respectivelyillustrate IR emitter subpixel 2210 and IR detector subpixel 2610 formedon circuitry 120, FIGS. 23 and 27 respectively illustrate IR emittersubpixel 2210 and IR detector subpixel 2610 being utilized with pixel100, FIGS. 24 and 28 respectively illustrate rotated views of IR emittersubpixel 2210 and IR detector subpixel 2610, and FIGS. 25 and 29respectively illustrate exploded views of IR emitter subpixel 2210 andIR detector subpixel 2610. In general, these figures depict theconductive portions of the illustrated layers. Other insulating areas(e.g., outside and between the subpixel stacks) have been removed forsake of visual clarity.

In general, electronic displays may utilize IR emitter subpixels 2210and IR detector subpixels 2610 to emit and detect IR light in order toprovide functionality such as eye tracking, eye gaze analysis, andtracking/detection of any other object that may reflect IR light. As oneexample, a head-mounted display (HMD) may utilize IR emitter subpixels2210 along with IR detector subpixels 2610 in order to provide eyetracking of the user wearing the HMD. Current HMDs that utilize eyetracking typically have inward-facing IR LEDs and cameras mounted atvarious points on the frame of the HMD. This requires accommodations forwiring and circuitry, not to mention the added bulk associated with theelectronics and optics of the components themselves. Thus, head-mountedeye tracking systems contribute to the typical unwieldy mass of HMDsthat use the technology, further necessitating the need for additionalsupport and reducing user comfort. Furthermore, the range of view oftypical eye-tracking sensors is also problematic, requiring the sensorsto have a direct line of sight view of the user's pupils at all times.This limits the locations which these sensors can be mounted to regionswithin the user's visual field, obstructing the view to various degreesdepending on where and how the hardware is mounted. However, embodimentsof the disclosure address these and other problems with existing devicessuch as HMDs by utilizing coplanar IR emitter subpixels 2210 and IRdetector subpixels 2610 that are embedded directly within an electronicdisplay. As a result, the overall structure of a device such as a HMDmay be simplified and lightened since visible hardware such asinward-facing IR LEDs and cameras can be eliminated. Furthermore,eliminating visible tracking hardware from a user's field of vision alsoimproves clarity of the visible scene, as there are no obstructionscaused by the hardware placement.

In some embodiments, IR emitter subpixel 2210 is formed on and coupledto backplane circuitry 120 as illustrated in FIG. 22. Similarly, IRdetector subpixel 2610 may in some embodiments be formed on and coupledto backplane circuitry 120 as illustrated in FIG. 26. In suchembodiments, one or more subpixels 110 may be formed on top of IRemitter subpixel 2210 and IR detector subpixel 2610, as illustrated inFIGS. 23 and 27. In other embodiments, IR emitter subpixels 2210 and IRdetector subpixels 2610 may be formed on top of pixels 100 or pixels1800 (i.e., at the top of the stack of subpixels 110 of pixel 100 orpixel 1800). In some embodiments, IR emitter subpixels 2210 and IRdetector subpixels 2610 may take the place of any subpixels 110 ofpixels 100 or pixels 1800 (i.e., one or more subpixels 110 may be bothabove and below IR emitter subpixel 2210 and IR detector subpixel 2610).In some embodiments, there are no subpixels 110 above or below IRemitter subpixel 2210 and IR detector subpixel 2610.

IR emitter subpixel 2210 and IR detector subpixel 2610 may each beelectrically coupled to circuitry 120 via two or more connector columns2230. For example, each IR emitter subpixel 2210 and each IR detectorsubpixel 2610 may be electrically coupled to circuitry 120 via twoconnector columns 2230: connector column 2230A and connector column2230B. As a specific example, IR emitter subpixel 2210 may be coupled tocircuitry 120 via connector columns 2230A and 2230B and connection pads2240A and 2240B, as illustrated.

In general, connector columns 2230 may be similar in function toconnector columns 130 and may be connected only to a single layer of IRsubpixels 2210 and 2610 (i.e., a single anode layer 2520 or cathodelayer 2530), thereby permitting circuitry 120 to uniquely address eachanode layer 2520 and cathode layer 2530 of IR subpixels 2210 and 2610.For example, connector column 2230B may be coupled only to anode layer2520, as illustrated. Connector columns 2230 are formed by one or moreconnector column portions 135, as illustrated in FIGS. 25 and 29. Asdescribed above, each connector column portion 135 is an island ofmaterial that is electrically isolated from the layer on which it isformed, but permits an electrical connection between the variousillustrated layers of connector columns 2230. In general, the connectorcolumns 2230 of a particular IR subpixel each have unique heights. Inthe illustrated embodiments, for example, connector column 2230B is thefull height of IR emitter subpixel 2210, while connector column 2230A isonly as tall as cathode layer 2530 of IR emitter subpixel 2210.Connector columns 2230 may be any appropriate size or shape. Forexample, connector columns 2230 may have a cross-sectional shape of asquare, rectangle, circle, triangle, trapezoid, or any other appropriateshape. In the illustrated embodiments, connector columns 2230 have across-sectional shape of a triangle. In some embodiments, connectionpads 2240 have a corresponding shape to connector columns 2230. Forexample, if connector columns 2230 have a cross-sectional shape of atriangle, connection pads 2240 may also be in the shape of a triangle.

Various layers of each IR emitter subpixel 2210 and IR detector subpixel2610 (e.g., anode layers 2520 and cathode layers 2530 as describedbelow) may be electrically coupled to circuitry 120 via connectorcolumns 2230 (e.g., 2230A and 2230B) and connection pads 2240 (e.g.,2240A and 2240B). For example, IR emitter subpixel 2210 may be coupledto circuitry 120 via connector columns 2230A and 2230B and connectionpads 2240A and 2240B. As a result, each subpixel 110 may be individuallyaddressed and controlled by circuitry 120.

As illustrated in detail in FIGS. 25 and 29, each IR emitter subpixel2210 and each IR detector subpixel 2610 may include at least threelayers: an anode layer 2520, a cathode layer 2530, and an IR layer(e.g., an IR emitter layer 2510 or an IR detector layer 2910). Forexample, IR emitter subpixel 2210 may include at least a cathode layer2530, an IR emissive layer 2510 on top of cathode layer 2530, and ananode layer 2520 on top of IR emissive layer 2510. Likewise, IR detectorsubpixel 2610 may include at least a cathode layer 2530, an IR detectorlayer 2910 on top of cathode layer 2530, and an anode layer 2520 on topof IR detector layer 2910. In other embodiments, IR emitter subpixels2210 and IR detector subpixels 2610 may include additional layers thatare not illustrated in FIGS. 25 and 29. For example, some embodiments ofIR emitter subpixels 2210 and IR detector subpixels 2610 may includeadditional insulating layers 310 that are not specifically illustrated.As a specific example, some embodiments of IR emissive layers 2510 mayinclude multiple sub-layers of OLED emission architectures orelectroluminescent quantum dot architectures.

Like anode layers 220 and cathode layers 230, anode layers 2520 andcathode layers 2530 are formed, respectively, from any appropriate anodeor cathode material. For example, anode layers 2520 and cathode layers2530 may include simple conductive polymers (or similar materials) usedas transparent electrodes. In general, one or both of anode layers 2520and cathode layers 2530 may be transparent to IR or near-IR wavelengthsso that IR light may pass unimpeded to and from IR emissive layers 2510and IR detector layers 2910. For example, if a layer such as anode layer2520 is above IR layers 2510 and 2910, all or a portion of the anodelayer 2520 may be transparent to one or more wavelengths of IR ornear-IR light, but opaque to the visible spectrum. On the other hand, ifa layer such as cathode layer 2530 is below IR layer 2510 and 2910, itmay not need to be transparent to IR or visible light (i.e., it may beopaque to IR and the visible spectrum), especially if no other subpixels110 are located above the IR subpixel. However, if the IR subpixel islocated above or within a stack of RGB subpixels 110, both anode layers2520 and cathode layers 2530 may be transparent to visible light, and atleast one may be additionally transparent to IR or near-IR light (e.g.,the layer above the IR layer in the IR subpixel). In some embodiments,anode layers 220 and cathode layers 230 may be positioned on the edgesof IR emitter subpixel 2210 and IR detector subpixel 2610 (i.e., IRlight entering subpixel 2210 and IR detector subpixel 2610 does not passthrough anode layers 220 and cathode layers 230). In such embodiments,anode layers 220 and cathode layers 230 do not need to be transparent toIR light.

IR emissive layers 2510 generally are formed from any appropriatematerial capable of emitting IR light while supporting transparency. Insome embodiments, IR emissive layers 2510 may include bothelectroluminescent capabilities (e.g., a diode converting electriccurrent into light) and photoluminescent capabilities (fordown-converting incoming higher-energy light to lower-energywavelengths). For example, IR emissive layers 2510 may beelectroluminescent quantum dot (QD) layers such as quantum-dot-basedlight-emitting diode (QLED) layers. In some embodiments, IR emissivelayers 2510 may be organic light-emitting diode (OLED) layers. Ingeneral, IR emissive layers 2510 may be precisely tuned for narrow bandemission of specific wavelengths of IR light. By usingelectroluminescent QD IR emissive layers 2510, certain embodimentsprovide 1) more efficient use of power than other methods such as liquidcrystal displays (LCD), and 2) significantly higher contrast ratios thanother technologies such as LCD can offer. And because each IR emittersubpixel 2210 is controlled directly by voltage, faster response timesare possible than with technologies such as LCD.

IR detector layers 2910 generally are formed from any appropriatematerial capable of detecting IR light while supporting transparency.For example, IR detector layers 2910 may be tuned color-specificelectroluminescent QD layers such as QLED layers. In some embodiments,IR detector layers 2910 may be OLED layers. In some embodiments, IRdetector layers 2910 may be precisely tuned for narrow band detection ofspecific wavelengths of IR light.

In some embodiments, IR emitter subpixels 2210 and IR detector subpixels2610 have an overall shape of a polygon when viewed from above. Forexample, IR emitter subpixels 2210 and IR detector subpixels 2610 may behexagon-shaped, octagon-shaped, or the shape of any other polygon suchas a triangle, quadrangle, pentagon, heptagon, and the like. In someembodiments, the top-down shapes of IR emitter subpixels 2210 and IRdetector subpixels 2610 may correspond to the top-down shapes of pixels100 or 1800. For example, if pixel 100 has a top-down shape of ahexagon, the top-down shapes of IR emitter subpixels 2210 and IRdetector subpixels 2610 may also be hexagons.

In some embodiments, each individual layer of IR emitter subpixel 2210and IR detector subpixel 2610 has a different top-down shape than theoverall top-down shape of IR subpixels 2210 and 2610 in order toaccommodate connector columns 2230. In other words, instead of havingconnector columns 130 on the outside of the overall polygon shape asdescribed above for embodiments of subpixels 110, some embodiments of IRsubpixels 2210 and 2610 have cutouts or notches in various layers forconnector columns 2230. This is illustrated best in FIGS. 37A-42B.Taking an IR subpixel 2210 or 2610 with an overall top-down shape of ahexagon as an example, each anode layer 2520 and cathode layer 2530 ofan individual IR subpixel may have a notch cut out of one side of thehexagon for connector columns 2230, thereby resulting in a main top-downshape of a heptagon (i.e., a seven-sided polygon) as illustrated inFIGS. 37A and 41A. More specifically, cathode layer 2530, which may be abottom layer in some embodiments, may have a shape as illustrated inFIG. 37A that includes a side of the polygon (e.g., a hexagon) that hasbeen notched in order to form connector column portion 135. In thiscase, the connector column portion 135 of cathode layer 2530 forms apart of connector column 2230B and enables anode layer 2520 to beelectrically coupled to circuitry 120. Similarly, anode layer 2520,which may be a top layer of IR subpixels 2210 and 2610 in someembodiments, may have a shape as illustrated in FIG. 41A that includes aside of the polygon (e.g., a hexagon) that has been removed in order toprevent anode layer 2520 from being coupled to connector column 2230A.As illustrated in these figures, the main shape of anode layer 2520(i.e., the portion of anode layer 2520 minus connector column portion135) may be a mirror image of the main shape of cathode layer 2530.

In both anode layer 2520 and cathode layer 2530, the portion of thepolygon that is opposite its notched side enables the particular layerto be electrically coupled to circuitry 120 via connector columns 2230.For example, as illustrated in FIG. 37A, the side of the polygon shapeof cathode layer 2530 that is opposite its notched side is the portionof cathode layer 2530 that couples it to connector column 2230A in someembodiments. Similarly, as illustrated in FIG. 41A, the side of thepolygon shape of anode layer 2520 that is opposite its notched side isthe portion of anode layer 2520 that couples it to connector column2230B in some embodiments. As illustrated in the figures, connectorcolumn portions 135 may be utilized on the various layers of IRsubpixels 2210 and 2610 in order to couple anode layers 2520 and cathodelayers 2530 to circuitry 120.

Similar to anode layers 2520 and cathode layers 2530, each IR layer ofIR subpixels 2210 and 2610 (i.e., IR emissive layer 2510 and IR detectorlayer 2910) has a different top-down shape than the overall top-downshape of IR subpixels 2210 and 2610 in order to accommodate connectorcolumns 2230. For example, some embodiments of IR emissive layer 2510and IR detector layer 2910 have cutouts or notches on two sides toaccommodate both connector columns 2230A and 2230B. This is illustratedbest in FIGS. 39A-41B. Taking an IR subpixel 2210 or 2610 with anoverall top-down shape of a hexagon as an example, each IR emissivelayer 2510 and IR detector layer 2910 of an individual IR subpixel mayhave a notch cut out of two opposing sides of the hexagon for connectorcolumns 2230A and 2230B, thereby resulting in a top-down main shape ofan octagon (i.e., an eight-sided polygon) as illustrated in FIGS. 39BAand 40B. As a specific example, IR detector layer 2910, which may be amiddle layer in some embodiments, may have a shape as illustrated inFIG. 39B that includes two opposing sides of the polygon (e.g., ahexagon) that have been notched, and a single connector column portion135 has been formed beside one of the notches. In this case, theconnector column portion 135 of IR detector layer 2910 forms a part ofconnector column 2230B and enables anode layer 2520 to be electricallycoupled to circuitry 120. In some embodiments, connector column portions135 of IR emissive layer 2510 and IR detector layer 2910 are formed fromany appropriate conductive material, and are not formed from theemissive or detector materials of IR emissive layer 2510 and IR detectorlayer 2910.

Embodiments of IR subpixels 2210 and 2610 may include one or moreinsulating layers 310, as illustrated in FIGS. 25 and 29. For example,some embodiments of IR subpixels 2210 and 2610 may include a firstinsulating layer 310 between circuitry 120 and cathode layer 2530, asillustrated in these figures. In embodiments where IR subpixels 2210 and2610 are either below or above other subpixels 110, such embodiments mayinclude additional insulating layers 310 between subpixels 110 and theIR subpixels 2210 and 2610. Insulating layers 310 may be any appropriatematerial that electrically isolates adjacent layers of subpixels.

FIGS. 30-33 illustrate various embodiments of an electronic display 3000having a patterned array of pixel locations 3010. FIG. 30 illustrates atop-down view of one embodiment of electronic display 3000, and FIG. 32illustrates a perspective view of the electronic display 3000 of FIG.30. Similarly, FIG. 31 illustrates a top-down view of another embodimentof electronic display 3000, and FIG. 34 illustrates a perspective viewof the electronic display 3000 of FIG. 31.

Pixel locations 3010 of electronic display 3000 may be occupied by thevarious pixels and subpixels described herein. In specific embodiments,pixel locations 3010 may each include either an IR emitter subpixel 2210or an IR detector subpixel 2610. Any appropriate pattern of IR emittersubpixels 2210 and IR detector subpixels 2610 may be utilized byelectronic display 3000. In the example embodiments illustrated in FIGS.30-33, pixel locations 3010A (i.e., pixel locations 3010 that are shadedin black) may each be occupied by an IR detector subpixel 2610, andpixel locations 3010B (i.e., pixel locations 3010 that are shaded inwhite) may each be occupied by an IR emitter subpixel 2210 (note that IRemitter subpixels 2210 are not illustrated in pixel locations 3010B inFIGS. 32-33 for clarity). More specifically, in the embodimentillustrated in FIG. 30, each IR emitter subpixel 2210 in pixel locations3010B is surrounded by six IR detector subpixels 2610 in pixel locations3010A. Conversely, in the embodiment illustrated in FIG. 31, each IRdetector subpixel 2610 in pixel locations 3010A is surrounded by six IRemitter subpixel 2210 in pixel locations 3010B. While specific patternsof IR emitter subpixels 2210 and IR detector subpixels 2610 areillustrated in FIGS. 30-33, any other pattern of IR emitter subpixels2210 and IR detector subpixels 2610 may be utilized by electronicdisplay 3000 (e.g., horizontal alternating stripes, vertical alternatingstripes, etc.).

In some embodiments, IR emitter subpixels 2210 and IR detector subpixels2610 may be at the corners of electronic display 3000 (i.e., not withinpixel locations 3010). For example, some displays may include arrays ofelectronic displays 3000, and IR subpixels 2210 and 2610 may be locatedat the intersections of the electronic displays 3000. As a specificexample, if electronic displays 3000 are in the shape of a rectangle, IRsubpixels 2210 and 2610 may be located at the corners where fourelectronic displays 3000 meet.

FIG. 34 illustrates a method 3400 of manufacturing an IR subpixel,according to certain embodiments. For example, method 3400 may be usedto manufacture IR emitter subpixel 2210 or IR detector subpixel 2610, asdescribed above. Method 3400, in general, utilizes steps 3410-3440 tocreate layers of an IR subpixel using lithography. The various layerscreated by these steps and the photomasks that may be utilized to createthe various layers are illustrated in FIGS. 35A-42B, wherein theinsulating material has been removed from the layers to allow a betterview of the structure of conductive elements. FIGS. 35A, 37A, 39A, and41A correspond to the example pattern illustrated in FIG. 30, and FIGS.36A, 28A, 40A, and 42A correspond to the example pattern illustrated inFIG. 31.

Method 3400 may begin in step 3410 where an insulating layer is createdby depositing a layer of insulating material and then patterning thelayer of insulating material using lithography. In some embodiments, theinsulating layer is insulating layer 310 that is illustrated in FIGS.35A and 36A. In some embodiments, the insulating layer is a transparentinsulating layer (e.g., transparent to visible, IR, or near-IR light).In some embodiments, the layer of insulating material is deposited on asubstrate or backplane that includes circuitry 120, as described above.In some embodiments, the layer of insulating material is patterned intothe insulating layer using photolithography. A portion of a photomask3500 that may be utilized by this step to pattern the layer ofinsulating material into the insulating layer of FIG. 35A is illustratedin FIG. 35B. Likewise, a portion of a photomask 3600 that may beutilized by this step to pattern the layer of insulating material intothe insulating layer of FIG. 36A is illustrated in FIG. 36B.

At step 3420, a cathode layer of an IR subpixel is created by depositinga layer of conductive material on the patterned insulating layer of step3410 and then patterning the cathode layer using lithography such asphotolithography. In some embodiments, the cathode layer is cathodelayer 2530 that is illustrated in FIGS. 37A and 38A. In someembodiments, the cathode layer is a transparent cathode layer (e.g.,transparent to visible, IR, or near-IR light). A portion of a photomask3700 that may be utilized by this step to pattern the layer ofconductive material into the cathode layer of FIG. 37A is illustrated inFIG. 37B. Likewise, a portion of a photomask 3800 that may be utilizedby this step to pattern the layer of conductive material into thecathode layer of FIG. 38A is illustrated in FIG. 38B. In someembodiments, patterning the cathode layer includes forming a portion ofthe cathode layer into a polygon shape, such as a hexagon, heptagon, oran octagon. For example, as illustrated in FIG. 37B, the cathode layerof a single IR subpixel may have an overall shape of a hexagon whenviewed from above and may include one side of the hexagon that has beenpartitioned to form a connector column portion 135 (e.g., in the shapeof a triangle). As a result, the cathode layer of a single IR subpixelin some embodiments may include a main portion that includes at leastseven sides and a disconnected connector column portion 135 in the shapeof a tringle. While specific shapes of the cathode layer of a single IRsubpixel have been illustrated, any other appropriate shapes may beused.

At step 3430, an IR layer of an IR subpixel is created by depositing alayer of IR emissive material or IR detecting material on the cathodelayer of step 3420 and then patterning the IR layer using lithographysuch as photolithography. More specifically, if the IR subpixel beingcreated by method 3400 is IR detector subpixel 2610, IR detectingmaterial is deposited in this step to create IR detector layer 2910. Onthe other hand, if the IR subpixel being created by method 3400 is IRemitter subpixel 2210, IR emitting material is deposited in this step tocreate IR emissive layer 2510. In some embodiments, the IR layer is theIR layer illustrated in FIGS. 39A and 40A. A portion of a photomask 3900that may be utilized by this step to pattern the layer of IR materialinto the IR layer of FIG. 39A is illustrated in FIG. 39B. Similarly, aportion of a photomask 4000 that may be utilized by this step to patternthe layer of IR material into the IR layer of FIG. 40A is illustrated inFIG. 40B. In some embodiments, patterning the IR layer includes forminga portion of the IR layer into a polygon shape, such as a hexagon or anoctagon. For example, as illustrated in FIG. 39B, the IR layer of asingle subpixel of some embodiments may have a main shape of an octagonwith a connector column portion 135 proximate to one side of the octagonwhen viewed from above. While specific shapes of the IR layer of asingle IR subpixel have been illustrated, any other appropriate shapesmay be used.

At step 3440, an anode layer of an IR subpixel is created by depositinga layer of anode material on the patterned IR layer of step 3430 andthen patterning the anode layer using lithography such asphotolithography. In some embodiments, the anode layer is anode layer2520 that is illustrated in FIGS. 41A and 42A. In some embodiments, theanode layer is a transparent anode layer (e.g., transparent to visible,IR, or near-IR light). A portion of a photomask 4100 that may beutilized by this step to pattern the layer of anode material into theanode layer of FIG. 41A is illustrated in FIG. 41B. Likewise, a portionof a photomask 4200 that may be utilized by this step to pattern thelayer of anode material into the anode layer of FIG. 42A is illustratedin FIG. 42B. In some embodiments, patterning the anode layer includesforming a portion of the anode layer into a polygon shape, such as ahexagon, heptagon, or an octagon. For example, as illustrated in FIG.41B, the anode layer of a single IR subpixel may have an overall shapeof a hexagon when viewed from above and may include one side of thehexagon that has been partitioned to form a connector column portion 135(e.g., in the shape of a triangle). As a result, the anode layer of asingle IR subpixel in some embodiments may include a main portion thatincludes at least seven sides and a disconnected connector columnportion 135 in the shape of a tringle. While specific shapes of thecathode layer of a single IR subpixel have been illustrated, any otherappropriate shapes may be used.

In some embodiments, method 3400 may include forming additional layersthat are not specifically illustrated in FIG. 34. For example,additional layers such as insulating layers 310 may be formed by method3400 at any appropriate location. As another example, some embodimentsmay include one or more additional layers of graphene or other similarelectrically-enhancing materials in order to improve efficiency andconductivity. As yet another example, some embodiments may includeforming or adding a micro-lens layer above the topmost layer of the IRsubpixel to further direct IR light emission and detection.

In some embodiments, method 3400 may be modified to form the IR layer ofthe IR subpixel of step 3420 on an anode layer instead of a cathodelayer. More specifically, an anode layer of the IR subpixel may beformed in step 3420, the IR layer of the IR subpixel may be formed onthe anode layer in step 3430, and a cathode layer may be formed on theIR layer in step 3440.

Particular embodiments may repeat one or more steps of the method ofFIG. 34, where appropriate. Although this disclosure describes andillustrates particular steps of the method of FIG. 34 as occurring in aparticular order, this disclosure contemplates any suitable steps of themethod of FIG. 34 occurring in any suitable order. Moreover, althoughthis disclosure describes and illustrates an example method for formingan IR subpixel including the particular steps of the method of FIG. 34,this disclosure contemplates any suitable method for forming an IRsubpixel including any suitable steps, which may include all, some, ornone of the steps of the method of FIG. 34, where appropriate.Furthermore, although this disclosure describes and illustratesparticular components, devices, or systems carrying out particular stepsof the method of FIG. 34, this disclosure contemplates any suitablecombination of any suitable components, devices, or systems carrying outany suitable steps of the method of FIG. 34.

Herein, “or” is inclusive and not exclusive, unless expressly indicatedotherwise or indicated otherwise by context. Therefore, herein, “A or B”means “A, B, or both,” unless expressly indicated otherwise or indicatedotherwise by context. Moreover, “and” is both joint and several, unlessexpressly indicated otherwise or indicated otherwise by context.Therefore, herein, “A and B” means “A and B, jointly or severally,”unless expressly indicated otherwise or indicated otherwise by context.

Herein, the phrase “on top” when used to describe subpixels 110, 2210,and 2610 and their various layers (e.g., layers 210, 220, and 230)refers to a viewing direction for display pixels 100 and a light entrydirection for sensor pixels 1800. As an example, subpixel 110B ofdisplay pixel 100 is described as being stacked “on top” of subpixel110A. As illustrated in FIGS. 2-3, “on top” means that subpixel 110B ison the side of subpixel 110A that is towards the location that thecombined light that is emitted from display pixel 100 may be viewed.Stated another way, subpixel 110B is on the opposite side of subpixel110A from circuitry 120. As another example, subpixel 110C of sensorpixel 1800 is described as being stacked “on top” of subpixel 110B. Asillustrated in FIGS. 19-20, “on top” means that subpixel 110C is on theside of subpixel 110B that is towards the location that the fullspectrum light enters sensor pixel 1800.

The scope of this disclosure encompasses all changes, substitutions,variations, alterations, and modifications to the example embodimentsdescribed or illustrated herein that a person having ordinary skill inthe art would comprehend. The scope of this disclosure is not limited tothe example embodiments described or illustrated herein. Moreover,although this disclosure describes and illustrates respectiveembodiments herein as including particular components, elements,functions, operations, or steps, any of these embodiments may includeany combination or permutation of any of the components, elements,functions, operations, or steps described or illustrated anywhere hereinthat a person having ordinary skill in the art would comprehend.Furthermore, reference in the appended claims to an apparatus or systemor a component of an apparatus or system being adapted to, arranged to,capable of, configured to, enabled to, operable to, or operative toperform a particular function encompasses that apparatus, system,component, whether or not it or that particular function is activated,turned on, or unlocked, as long as that apparatus, system, or componentis so adapted, arranged, capable, configured, enabled, operable, oroperative.

Although this disclosure describes and illustrates respectiveembodiments herein as including particular components, elements,functions, operations, or steps, any of these embodiments may includeany combination or permutation of any of the components, elements,functions, operations, or steps described or illustrated anywhere hereinthat a person having ordinary skill in the art would comprehend.

Furthermore, reference in the appended claims to an apparatus or systemor a component of an apparatus or system being adapted to, arranged to,capable of, configured to, enabled to, operable to, or operative toperform a particular function encompasses that apparatus, system,component, whether or not it or that particular function is activated,turned on, or unlocked, as long as that apparatus, system, or componentis so adapted, arranged, capable, configured, enabled, operable, oroperative.

1.-15. (canceled)
 16. A method of manufacturing an IR subpixel for an electronic display, the method comprising: creating an insulating layer by depositing a layer of insulating material and then patterning the layer of insulating material using lithography; creating a cathode layer of the IR subpixel by depositing a layer of conductive material on the patterned insulating layer and then patterning the cathode layer using lithography, wherein patterning the cathode layer comprises forming a portion of the cathode layer into a polygon shape; creating an IR layer of the IR subpixel by depositing a layer of IR emissive or IR detecting material on the patterned cathode layer and then patterning the IR layer using lithography, wherein patterning the IR layer comprises forming a portion of the IR layer into the polygon shape; and creating an anode layer of the IR subpixel by depositing a layer of anode material on the patterned IR layer and then patterning the anode layer using lithography, wherein patterning the anode layer comprises forming a portion of the anode layer into the polygon shape.
 17. The method of manufacturing an IR subpixel for an electronic display of claim 16, wherein the lithography comprises photolithography.
 18. The method of manufacturing an IR subpixel for an electronic display of claim 16, wherein the polygon shape comprises a hexagon, an octagon, a triangle, or a quadrangle.
 19. The method of manufacturing an IR subpixel for an electronic display of claim 16, wherein the IR emissive or IR detecting material comprises a quantum dot photoelectric material, an organic light-emitting diode (OLED) material, or a quantum-dot-based light-emitting diode (QLED) material.
 20. The method of manufacturing an IR subpixel for an electronic display of claim 16, wherein: patterning the cathode layer further comprises forming a portion of a first connection column proximate to one side of the polygon shape of the cathode layer; and patterning the anode layer further comprises forming a portion of a second connection column proximate to one side of the polygon shape of the anode layer.
 21. A method of manufacturing, the method comprising: depositing a layer of conductive material on a layer of insulating material to create a cathode layer; patterning the cathode layer to create a patterned cathode layer, wherein patterning the cathode layer comprises forming a portion of the cathode layer into a polygon shape; depositing a layer of IR emissive material on the patterned cathode layer to create an IR layer of an IR subpixel; patterning the IR layer to create a patterned IR layer, wherein patterning the IR layer comprises forming a portion of the IR layer into the polygon shape; depositing a layer of anode material on the patterned IR layer to create an anode layer of the IR subpixel; patterning the anode layer to create a patterned anode layer, wherein patterning the anode layer comprises forming a portion of the anode layer into the polygon shape.
 22. The method of manufacturing of claim 21, wherein patterning the cathode layer, the IR layer, and the anode layer comprises using photolithography.
 23. The method of manufacturing of claim 21, wherein the polygon shape comprises a hexagon, an octagon, a triangle, or a quadrangle.
 24. The method of manufacturing of claim 21, wherein the IR emissive material comprises a quantum dot photoelectric material, an organic light-emitting diode (OLED) material, or a quantum-dot-based light-emitting diode (QLED) material.
 25. The method of manufacturing of claim 21, wherein: patterning the cathode layer further comprises forming a portion of a first connection column proximate to one side of the polygon shape, of the cathode layer; and patterning the anode layer further comprises forming a portion of a second connection column proximate to one side of the polygon shape of the anode layer.
 26. A method of manufacturing, the method comprising: depositing a layer of conductive material on a layer of insulating material to create a cathode layer; patterning the cathode layer to create a patterned cathode layer, wherein patterning the cathode layer comprises forming a portion of the cathode layer into a polygon shape; depositing a layer of IR detecting material on the patterned cathode layer to create an IR layer of an IR subpixel; patterning the IR layer to create a patterned IR layer, wherein patterning the IR layer comprises forming a portion of the IR layer into the polygon shape; depositing a layer of anode material on the patterned IR layer to create an anode layer of the IR subpixel; patterning the anode layer to create a patterned anode layer, wherein patterning the anode layer comprises forming a portion of the anode layer into the polygon shape.
 27. The method of manufacturing of claim 26, wherein patterning the cathode layer, the IR layer, and the anode layer comprises using photolithography.
 28. The method of manufacturing of claim 26, wherein the polygon shape comprises a hexagon, an octagon, a triangle, or a quadrangle.
 26. The method of manufacturing of claim 26, wherein the IR detecting material comprises a quantum dot photoelectric material, an organic light-emitting diode (OLED) material, or a quantum-dot-based light-emitting diode (QLED) material.
 30. The method of manufacturing of claim 26, wherein: patterning the cathode layer further comprises forming a portion of a first connection column proximate to one side of the polygon shape of the cathode layer; and patterning the anode layer further comprises forming a portion of a second connection column proximate to one side of the polygon shape of the anode layer. 